Since around the end of 2023, the prices for general‑purpose DRAM and NAND flash have been on a double‑digit upward trend, and it is expected that by next year they will rise substantially to HBM (High Bandwidth Memory). Kim Dong‑won, head of KB Securities’ research division, said, “According to market research firm TrendForce, the price of general‑purpose DRAM in Q4 of this year is projected to increase 10–15% over the previous quarter, and NAND flash will rise an additional 15–20%. The two‑digit upward trend is expected to continue beyond that.” He added, “In particular, demand for server‑grade DRAM and enterprise SSD will persist.”
With the mainstreaming of artificial intelligence (AI), the memory semiconductor market appears set to enter a strong cycle where both price and volume rise simultaneously next year. Kim said, “The demand for server‑grade DRAM and SSD is projected to grow over 80% as AI adoption expands.” He added, “Considering that HBM’s supply price has already moved sharply, we expect HBM prices to rise substantially from next year.”
Major memory makers such as Samsung Electronics and SK Hynix are expected to limit expansion of supply amid tight demand. Kim noted, “New cleanrooms and additional capacity take more than three years, so the ability to expand supply in response to the surging demand will be very limited.”
Accordingly, the memory market next year is likely to enter a strong cycle where price and volume rise together. Kim emphasized that “Samsung Electronics and SK Hynix should stay alert.” He concluded, “If companies watch the changes in memory demand and HBM supply price, they can secure stable participation through fixed‑price contracts.”