Samsung Electronics and Seagate have jointly developed high-bandwidth memory technology for AI, releasing the HBF (High‑Brain Flash) product line to address cost and performance bottlenecks in AI data centers. At a investors' presentation held on January 13, 2023 in Seoul, both companies announced that they had entered the first type‑out phase. This marks an important transition from design completion to actual manufacturing process.
In the press conference, it was projected that HBF would provide data processing speeds more than three times higher and lower power consumption compared to existing DRAM and NAND. Seagate emphasized that they aim for an average annual growth rate of 10 % until 2030, expanding deployment of HBF as a crucial high‑bandwidth flash for large-scale AI workloads.
The announced HBF series aims to alleviate memory bottlenecks by improving “memory infra” and simultaneously drive power efficiency in data centers. Samsung and Seagate plan to enter production lines from the first half of 2024, expected to strengthen their competitiveness in global semiconductor market.